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ZSC31150GEG2-R 数据表(PDF) 18 Page - Integrated Device Technology |
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ZSC31150GEG2-R 数据表(HTML) 18 Page - Integrated Device Technology |
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18 / 26 page ![]() ZSC31150 Datasheet © 2016 Integrated Device Technology, Inc. 18 December 6, 2016 3. Application Circuit Examples The application circuits contain external components that are needed for over-voltage, reverse polarity, and short circuit protection. Recommendation: Check the ZSC31150 product page www.IDT.com/ZSC31150 for other application examples given in application notes. Note: Some application notes require a customer login—see section 9 for details. Table 3.1 Application Circuit Parameters Symbol Parameter Min Typ Max Unit Notes C1 C 100 470 nF C2 C 100 nF C3 [a] C 4 47 160 nF The value of C3 is the sum of the load capacitor and the cable capacitance. C4, C5 [a] C 0 10 nF Recommended to increase EMC immunity. R1 10 kΩ RIBR R Refer to section 1.2. Ω [a] Higher values for C3, C4, and C5 increase EMC immunity. Figure 3.1 Bridge in Voltage Mode, External Diode Temperature Sensor 2 1 3 4 6 5 7 14 13 12 11 10 Serial Interface Sensor Bridge SDA SCL Out / OWI GND VSUPP C3 47nF +4.5V to +5.5V VDDA VSSA SDA SCL n.c. VDD VDDE IRTEMP VBR_T VBP VBR_B VBN AOUT VSSE 9 8 C2 100nF C1 100nF Temperature Sensor C5 C4 |
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