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MWI 100-12 E8

MKI 100-12 E8

IXYS reserves the right to change limits, test conditions and dimensions.

Equivalent Circuits for Simulation

Conduction

IGBT (typ. at V

V

Ω

Free Wheeling Diode (typ. at T

V

Ω

Thermal Response

IGBT (typ.)

C

C

Free Wheeling Diode (typ.)

C

C

Module

Symbol

Conditions

Maximum Ratings

T

VJ

operating

-40...+125

°C

T

JM

+150

°C

T

stg

-40...+125

°C

V

ISOL

I

2500

V~

M

d

Mounting torque (M5)

2.7 - 3.3

Nm

Symbol

Conditions

Characteristic Values

min.

typ.

max.

R

pin-chip

1.8

m

Ω

d

S

Creepage distance on surface

10

mm

d

A

Strike distance in air

10

mm

R

thCH

with heatsink compound

0.01

K/W

Weight

300

g

Diodes

Symbol

Conditions

Maximum Ratings

I

F25

T

25°C

200

A

I

F80

T

80°C

130

A

Symbol

Conditions

Characteristic Values

min.

typ.

max.

V

F

I

25°C

2.3

2.6

V

T

1.7

V

I

RM

I

58

A

t

rr

V

190

ns

R

thJC

(per diode)

0.3 K/W

pins 5, 6, 7, 8 and 17 for MWI only

Dimensions in mm (1 mm = 0.0394")