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MWI 100-12 E8

MKI 100-12 E8

IXYS reserves the right to change limits, test conditions and dimensions.

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8

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0.001

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0.1

1

10

0.0001

0.001

0.01

0.1

1

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8

12

16

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8

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800 1000 1200 1400

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50

100

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Eoff

td(off)

Eoff

td(off)

I

C

A

I

C

A

E

off

E

on

t

t

R

G

Ω

R

G

Ω

V

CE

t

s

mJ

E

on

mJ

E

off

t

ns

t

I

CM

K/W

Z

thJC

V

A

mJ

ns

mJ

ns

tr

Eon

tr

single pulse

diode

IGBT

ns

Eon

MWI100-12E8

td(on)

tf

V

V

I

C

= 100 A

T

VJ

= 125°C

V

V

I

C

= 100 A

T

VJ

= 125°C

V

V

R

12

Ω

T

VJ

= 125°C

V

V

R

12

Ω

T

VJ

= 125°C

R

T

td(on)

tf

Fig. 7

Typ. turn on energy and switching

Fig. 8

Typ. turn off energy and switching

times versus collector current

times versus collector current

Fig. 9

Typ. turn on energy and switching

Fig.10 Typ. turn off energy and switching

times versus gate resistor

times versus gate resistor

Fig. 11 Reverse biased safe operating area

Fig. 12 Typ. transient thermal impedance

RBSOA