WFP840C datasheet(1/7 Pages) WINSEMI

部件名	WFP840C

功能描述	Silicon N-Channel MOSFET

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制造商	WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]

网页	http://www.winsemi.com

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W

WF

F

FP840C

P840C

WT-F018-Rev.A0 Apr.2013

Silicon

Silicon N-Channel

N-Channel

N-Channel MOSFET

MOSFET

Features

�

9A,500V, RDS(on)(Max0.75Ω)@VGS=10V

�

Ultra-low Gate charge(Typical 28nC)

�

Fast Switching Capability

�

100%Avalanche Tested

�

Maximum Junction Temperature Range(150℃)

General Description

This Power MOSFET is produced using Winsemi’s advanced

planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a high

rugged avalanche characteristics. This devices is specially well

suited for high efficiency switch model power supplies, power

factor correction and half bridge and full bridge resonant topology

line a electronic lamp ballast.

Absolute Maximum Ratings

Symbol

Parameter

Value

Units

VDSS

Drain Source Voltage

500

V

ID

Continuous Drain Current(@Tc=25℃)

9

A

Continuous Drain Current(@Tc=100℃)

5.4

A

IDM

Drain Current Pulsed

(Note1)

36

A

VGS

Gate to Source Voltage

±30

V

EAS

Single Pulsed Avalanche Energy

(Note2)

360

mJ

EAR

Repetitive Avalanche Energy

(Note1)

13.5

mJ

dv/dt

Peak Diode Recovery dv /dt

(Note3)

4.5

V/ ns

PD

Total Power Dissipation(@Tc=25℃)

130

W

Derating Factor above 25℃

1.07

W/℃

TJ,Tstg

Junction and Storage Temperature

-40~150

℃

TL

Channel Temperature

300

℃

Thermal Characteristics

Symbol

Parameter

Value

Units

Min

Typ

Max

RQJC

Thermal Resistance , Junction -to -Case

-

0.96

℃/W

RQCS

Thermal Resistance , Case-to-Sink

-

0.5

-

℃/W

RQJA

Thermal Resistance , Junction-to -Ambient

-

62.5

℃/W

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