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LMH6718 数据表(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 LMH6718
功能描述  Dual, High Output, Programmable Gain Buffer
PDF  16 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

LMH6718 数据表(HTML) 2 Page - National Semiconductor (TI)

  LMH6718 Datasheet HTML 1Page - National Semiconductor (TI) LMH6718 Datasheet HTML 2Page - National Semiconductor (TI) LMH6718 Datasheet HTML 3Page - National Semiconductor (TI) LMH6718 Datasheet HTML 4Page - National Semiconductor (TI) LMH6718 Datasheet HTML 5Page - National Semiconductor (TI) LMH6718 Datasheet HTML 6Page - National Semiconductor (TI) LMH6718 Datasheet HTML 7Page - National Semiconductor (TI) LMH6718 Datasheet HTML 8Page - National Semiconductor (TI) LMH6718 Datasheet HTML 9Page - National Semiconductor (TI) Next Button
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance (Note 5)
Human Body Model
2kV
Machine Model
200V
Supply Voltage
13.5
Output Current
(Note 3)
Common-Mode Input Voltage
V
+ -V
Maximum Junction Temperature
+150˚C
Storage Temperature Range
−65˚C to +150˚C
Lead Temperature (Soldering 10 sec)
+300˚C
Operating Ratings
Thermal Resistance
Package
(
θ
JC)(
θ
JA)
SOIC
50˚C/W
145˚C/W
Nominal Operating Voltage
±2.5V to ±6V
Operating Temperature Range
−40˚C to +85˚C
+5V Electrical Characteristics (Note 2)
A
V = +2, RL = 100
Ω,V
S = +5V (Note 4), Unless Specified. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Frequency Domain Response
SSBW
-3dB Bandwidth
V
O =0.5VPP
70
110
MHz
V
O =2.0VPP
90
SSBW
−0.1dB Bandwidth
V
O =0.5VPP
23
MHz
GFP
Gain Peaking
<200MHz, V
O =0.5VPP
0dB
GFR
Gain Rolloff
<30MHz, V
O =0.5VPP
0.2
dB
LPD
Linear Phase Deviation
<30MHz, V
O = 0.5VPP
0.12
deg
Time Domain Response
Tr
Rise and Fall Time
2V Step
4.8
ns
Ts
Settling Time to 0.05%
1V Step
20
ns
OS
Overshoot
2V Step
5
%
SR
Slew Rate
2V Step
250
400
V/µs
Distortion And Noise Response
HD2
2nd Harmonic Distortion
2V
PP, 1MHz
−85
dBc
2V
PP, 1MHz; RL =1k
−88
2V
PP, 5MHz
−73
HD3
3rd Harmonic Distortion
2V
PP,1MHz
−89
dBc
2V
PP, 1MHz, RL =1k
−91
2V
PP, 5MHz
−71
XTLKA
Crosstalk (Input Referred)
10MHz, 1V
PP
−85
dB
Static, DC Performance
V
IO
Input Offset Voltage
±.6
±10
±20
mV
DV
IO
Average Drift
10
µV/˚C
I
BN
Input Bias Current
(Non-Inverting)
±.6
±15
±20
µA
DI
BN
Average Drift
20
nA/˚C
GACC
Gain Accuracy
±0.3
±1.5
±2.0
%
Internal Resistors (R
F,RG)
750
950
1150
PSRR
Power supply Rejection Ratio
DC
50
60
dB
CMRR
Common Mode Rejection Ratio
DC
50
47
56
dB
I
CC
Supply Current per channel
R
L =
2.0
1.9
2.4
3.0
3.1
mA
Miscellaneous Performance
R
IN
Input Resistance (Non-Inverting)
0.38
M
www.national.com
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