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ESDALC6V1P6 数据表(PDF) 4 Page - STMicroelectronics

部件名 ESDALC6V1P6
功能描述  QUAD LOW CAPACITANCE TRANSIL TM ARRAY FOR ESD PROTECTION
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ESDALC6V1P6 数据表(HTML) 4 Page - STMicroelectronics

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®
TECHNICAL INFORMATION
1. ESD protection by ESDALC6V1P6
With the focus of lowering the operation levels, the
problem of malfunction caused by the environment
is critical. Electrostatic discharge (ESD) is a major
cause of failure in electronic systems.
As a transient voltage suppressor, ESDALC6V1P6
is
an
ideal
choice
for
ESD
protection
by
suppressing ESD events. It is capable of clamping
the incoming transient to a low enough level such
that any damage is prevented on the device
protected by ESDALC6V1P6.
ESDALC6V1P6 serves as a parallel protection
elements, connected between the signal line and
ground. As the transient rises above the operating
voltage of the device, the ESDALC6V1P6 becomes a low impedance path diverting the transient current
to ground.
The clamping voltage is given by the following formula:
VCL = VBR + Rd.IPP
As shown in figure A2, the ESD strikes are clamped by the transient voltage suppressor.
Fig. A2: ESD clamping behavior.
To have a good approximation of the remaining voltages at both Vi/o side, we provide the typical
dynamical resistance value Rd. By taking into account the following hypothesis:
we have:
The results of the calculation done VG = 8kV, RG = 330Ω (IEC61000-4-2 standard), VBR = 6.4V (typ.) and
Rd = 1.5Ω (typ.) give:
This confirms the very low remaining voltage across the device to be protected. It is also important to note
that in this approximation the parasitic inductance effect was not taken into account. This could be a few
tenths of volts during a few ns at the Vi/o side.
Rd
RG
VG
VBR
VCL = V
+R x I
BR
d
PP
VBR
IPP
VCL
V(i/o)
Device
to be
protected
ESD surge
ESDALC6V1P6
V
I
IPP
RLOAD
1
Rd
slope =
R
G
R
d""and""Rload
R
d
>
>
Vi o
⁄
() V
BR
R
d
+
V
G
R
G
--------
×
=
Vi o
⁄
()
42.8 Volts
=
Fig. A: Application example.
IC
to be
protected
I/O2
I/O1
I/O4
I/O3



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