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ESDALC6V1P6 数据表(PDF) 6 Page - STMicroelectronics

部件名 ESDALC6V1P6
功能描述  QUAD LOW CAPACITANCE TRANSIL TM ARRAY FOR ESD PROTECTION
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ESDALC6V1P6 数据表(HTML) 6 Page - STMicroelectronics

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2. Crosstalk behavior
The crosstalk phenomena are due to the coupling between 2 lines. Coupling factors (
β12 or β21 ) increase
when the gap across lines decreases, particularly in silicon dice. In the example above, the expected
signal on load RL2 is α2VG2, in fact the real voltage at this point has got an extra value β21VG2. This part
of the VG1 signal represents the effect of the crosstalk phenomenon of the line 1 on the line 2. This
phenomenon has to be taken into account when the drivers impose fast digital data or high frequency
analog signals. The perturbed line will be more affected if it works with low voltage signal or high load
impedance (few k
Ω).
Figure A7 gives the measurement circuit for the analog crosstalk application. In figure 8, the curve shows
the effect of the cell I/O1 on the cell I/O4. In usual frequency range of analog signals (up to 100 MHz) the
effect on disturbed line is less than -55dB.
Fig. A6: Crosstalk phenomenon.
Fig. A7: Analog crosstalk test configuration.
Fig. A8: Typical analog crosstalk response.
RL1
RL2
αβ
1G1
12G2
V+
V
αβ
2G2
21G1
V+
V
Line 1
Line 2
VG1
VG2
DRIVERS
RECEIVERS
RG1
RG2
VG
GND
I/O1
I/O4
unloaded
50
Ω
50
Ω
Port 1
Port 2
100.0k
1.0M
10.0M
100.0M
1.0G
-100.00
-90.00
-80.00
-70.00
-60.00
-50.00
-40.00
-30.00
-20.00
-10.00
0.00
dB
f/Hz



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