If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Differential Input Voltage

Supply Voltage (V

16V

Output Short Circuit to V

+

(Note 11)

Output Short Circuit to V

−

(Note 1)

Lead Temperature

(Soldering, 10 sec.)

260˚C

Storage Temp. Range

−65˚C to +150˚C

Junction Temperature (Note 2)

150˚C

ESD Rating

(C = 100 pF, R = 1.5 k

Ω)

1000V

Power Dissipation

(Note 2)

Current at Input Pin

Current at Output Pin

Voltage at Input/Output Pin

(V

Current at Power Supply Pin

35 mA

Temperature Range

LPC660AM

−55˚C

≤ T

LPC660AI

−40˚C

≤ T

LPC660I

−40˚C

≤ T

Supply Range

4.75V to 15.5V

Power Dissipation

(Note 9)

Thermal Resistance (

θ

14-Pin Ceramic DIP

90˚C/W

14-Pin Molded DIP

85˚C/W

14-Pin SO

115˚C/W

14-Pin Side Brazed Ceramic DIP

90˚C/W

DC Electrical Characteristics

Unless otherwise specified, all limits guaranteed for T

= 0V, V

Parameter

Conditions

Typ

LPC660AM

LPC660AI

LPC660I

Units

LPC660AMJ/883

Limit

Limit

Limit

(Notes 4, 8)

(Note 4)

(Note 4)

Input Offset Voltage

1

3

3

6

mV

3.5

3.3

6.3

max

Input Offset Voltage

1.3

µV/˚C

Average Drift

Input Bias Current

0.002

20

pA

100

4

4

max

Input Offset Current

0.001

20

pA

100

2

2

max

Input Resistance

Tera

Ω

Common Mode

0V

≤ V

83

70

70

63

dB

Rejection Ratio

V

68

68

61

min

Positive Power Supply

5V

83

70

70

63

dB

Rejection Ratio

68

68

61

min

Negative Power Supply

0V

94

84

84

74

dB

Rejection Ratio

82

83

73

min

Input Common Mode

V

−0.4

−0.1

−0.1

−0.1

V

Voltage Range

00

0

max

V

V

V

V

V

V

V

V

min

Large Signal

R

1000

400

400

300

V/mV

Voltage Gain

Sourcing

250

300

200

min

Sinking

500

180

180

90

V/mV

70

120

70

min

R

1000

200

200

100

V/mV

Sourcing

150

160

80

min

Sinking

250

100

100

50

V/mV

35

60

40

min

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