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LPC660 数据表(PDF) 1 Page - National Semiconductor (TI) |
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LPC660 数据表(HTML) 1 Page - National Semiconductor (TI) |
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1 / 17 page ![]() LPC660 Low Power CMOS Quad Operational Amplifier General Description The LPC660 CMOS Quad operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltages from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input V OS, drift, and broadband noise as well as voltage gain (into 100 k Ω and5kΩ) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 1 mW. This chip is built with National’s advanced Double-Poly Silicon-Gate CMOS process. See the LPC662 datasheet for a Dual CMOS operational amplifier and LPC661 datasheet for a single CMOS opera- tional amplifier with these same features. Applications n High-impedance buffer n Precision current-to-voltage converter n Long-term integrator n High-impedance preamplifier n Active filter n Sample-and-Hold circuit n Peak detector Features n Rail-to-rail output swing n Micropower operation: (1 mW) n Specified for 100 k Ω and5kΩ loads n High voltage gain: 120 dB n Low input offset voltage: 3 mV n Low offset voltage drift: 1.3 µV/˚C n Ultra low input bias current: 2 fA n Input common-mode includes V − n Operation range from +5V to +15V n Low distortion: 0.01% at 1 kHz n Slew rate: 0.11 V/µs n Full military temp. range available Connection Diagram 14-Pin DIP/SO DS010547-1 Top View March 1998 © 1999 National Semiconductor Corporation DS010547 www.national.com |
类似零件编号 - LPC660 |
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类似说明 - LPC660 |
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