IRFD113, SiHFD113

www.vishay.com

Vishay Siliconix

S11-2479-Rev. A, 19-Dec-11

1

Document Number: 91487

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET

FEATURES

• For Automatic Insertion

• Compact Plastic Package

•End Stackable

• Fast Switching

• Low Drive Current

• Easily Paralleled

• Excellent Temperature Stability

• Compliant to RoHS Directive 2002/95/EC

Note

may apply

DESCRIPTION

The HVMDIP technology is the key to Vishay’s advanced

line of power MOSFET transistors. The efficient geometry

and unique processing of the HVMDIP design achieves

very

low

on-state

resistance

combined

with

high

transconductance

and

extreme

device

ruggedness.

HVMDIPs feature all of the established advantages of

MOSFETs such as voltage control, very fast switching, ease

of paralleling, and temperature stability of the electrical

parameters.

The HVMDIP 4 pin, dual-in-line package brings the

advantages of HVMDIPs to high volume applications where

automatic PC board insertion is desireable, such as circuit

boards

for

computers,

printers,

telecommunications

equipment, and consumer products. Their compatibility with

automatic

insertion

equipment,

low-profile

and

end

stackable features represent the stat-of-the-art in power

device packaging.

Notes

b. Repetitive rating; pulse width limited by maximum junction temperature.

c. 1.6 mm from case.

PRODUCT SUMMARY

60

0.8

7

2

7

Configuration

Single

N-Channel MOSFET

G

D

S

HVMDIP

D

S

G

ORDERING INFORMATION

Package

HVMDIP

Lead (Pb)-free

IRFD113PbF

SiHFD113-E3

PARAMETER

SYMBOL

LIMIT

UNIT

60

V

Gate-Source Voltage

± 20

Continuous Drain Current

0.8

A

6.4

Linear Derating Factor

0.008

W/°C

Inductive Current, Clamped

L = 100 μH

6.4

A

Maximum Power Dissipation

1.0

W

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s