IRFD113 datasheet(2/8 Pages) VISHAY

2 / 8 page

IRFD113, SiHFD113

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Vishay Siliconix

S11-2479-Rev. A, 19-Dec-11

Document Number: 91487

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

120

°C/W

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 500

Zero Gate Voltage Drain Current

IDSS

VDS = max. rating, VGS = 0 V

250

μA

VDS = max. rating x 0.8, VGS = 0 V, TC = 125 °C

1000

On-State Drain Currentb

ID(on)

VGS = 10 V

VDS > ID(on) x RDS(on) max.

0.8

Drain-Source On-State Resistanceb

RDS(on)

VGS = 10 V

ID = 0.8 A

0.6

0.8

Forward Transconductanceb

gfs

VDS > ID(on) x RDS(on) max., ID = 0.8 A

0.8

1.2

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz

135

200

Output Capacitance

Coss

-80

100

Reverse Transfer Capacitance

Crss

-20

Total Gate Charge

VGS = 10 V

ID = 4 A,

VDS = 0.8 max. rating

-5

Gate-Source Charge

Qgs

-2

Gate-Drain Charge

Qgd

-7

Turn-On Delay Time

td(on)

VDD = 0.5 VDS , ID = 0.8 A,

Rg = 50

-10

Rise Time

-15

Turn-Off Delay Time

td(off)

-15

Fall Time

-10

Internal Drain Inductance

Between lead,

2 mm (0.08") from

package and center of

die contact

-4.0

Internal Source Inductance

-6.0

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

0.8

Pulsed Diode Forward Current

ISM

6.4

Body Diode Voltagea

VSD

TA = 25 °C, IS = 0.8 A, VGS = 0 V

Body Diode Reverse Recovery Time

trr

TJ = 150 °C, IF = 1.0 A, dI/dt = 100 A/μs

100

Body Diode Reverse Recovery Charge

Qrr

-0.2

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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