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数据搜索系统，热门电子元器件搜索 |
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MF6 数据表(PDF) 3 Page - National Semiconductor (TI) |
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MF6 数据表(HTML) 3 Page - National Semiconductor (TI) |
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3 / 20 page  Filter Electrical Characteristics (Continued) The following specifications apply for f CLK ≤ 250 kHz (Note 3) unless otherwise specified. Boldface limits apply for TMIN to T MAX; all other limits TA = TJ = 25˚C. Parameter Conditions Typical Tested Design Units (Note 8) Limit Limit (Note 9) (Note 10) V+ = +2.5V, V− = −2.5V Total Supply Current fCLK=250 kHz 2.5 4.0 4.0 mA Maximum Clock Filter Output 20 mV Feedthrough Op Amp 1 Out 15 (peak-to- Op Amp 2 Out 10 peak) Ho, DC Gain Rsource≤2kΩ 0.0 ±0.30 ±0.30 dB fCLK/fc, Clock to Cutoff Frequency MF6-50 49.10±0.3% 49.10±2% 49.10±3% Ratio MF6-100 98.65±0.3% 98.65±2% 98.65±2.25% DC MF6-50 −200 mV Offset Voltage MF6-100 −400 Minimum Output RL=10 kΩ +1.5 +1.0 +1.0 V Voltage Swing −2.2 −1.7 −1.5 Maximum Output Source 28 Short Circuit Sink 0.5 mA Current (Note 6) Dynamic Range (Note 2) 77 dB Additional MF6-50 fCLK=250 kHz Magnitude f=6000 Hz −9.54 −9.54±0.6 −9.54±0.75 dB Response Test f=4500 Hz −0.96 −0.96±0.3 −0.96±0.4 Points (Note 4) MF6-100 fCLK=250 kHz f=3000 Hz −9.67 −9.67±0.6 −9.67±0.75 dB f=2250 Hz −1.01 −1.01±0.3 −1.01±0.4 Attenuation MF6-50 fCLK=250 kHz dB/ Rate f1=6000 Hz −36 −36 octave f2=8000 Hz MF6-100 fCLK=250 kHz dB/ f1=3000 Hz −36 −36 octave f2=4000 Hz Op Amp Electrical Characteristics Boldface limits apply for T MIN to TMAX; all other limits TA = TJ = 25˚C. Parameter Conditions Typical Tested Design Units (Note 8) Limit Limit (Note 9) (Note 10) V + = +5V, V− = −5V Input Offset Voltage ±8.0 ±20 ±20 mV Input Bias Current 10 pA CMRR (Op Amp #2 Only) VCM1 = 1.8V, 60 55 dB VCM2 = −2.2V Output Voltage Swing RL=10 kΩ +4.0 +3.8 +3.6 V −4.5 −4.0 −4.0 Maximum Output Short Source 54 65 80 mA Circuit Current (Note 6) Sink 2.0 4.0 6.0 Slew Rate 7.0 V/µs DC Open Loop Gain 72 dB Gain Bandwidth Product 1.2 MHz V + = +2.5V, V− = −2.5V Input Offset Voltage ±8.0 ±20 ±20 mV www.national.com 3 |
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