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STBCFG01 数据表(PDF) 10 Page - STMicroelectronics |
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STBCFG01 数据表(HTML) 10 Page - STMicroelectronics |
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10 / 37 page ![]() Electrical characteristics STBCFG01 10/37 DocID026474 Rev 3 Symbol Parameter Test conditions Min. Typ. Max. Unit VASD Automatic shutdown threshold VASD = VDCIN-VBAT, VDCIN rising 130 mV VASD = VDCIN-VBAT, VDCIN falling 0 36 mV tASD Automatic shutdown threshold deglitch time 50 µs IINLIM DCIN current limit ILIM configurable by I2C 90 mA 476 760 1140 VDICL Dynamic input current limit threshold DICL configurable by I2C (4.0 V, 4.25 V, 4.5 V, 4.75 V) 4.0 4.75 V DICL accuracy -3 +3 % tDICL DICL activation deglitch time 100 ms VFLOAT CV regulation voltage VBUS_CON = 5 V 3.52 4.78 V CV regulation voltage accuracy VBUS_CON = 5 V -1 +1 % VFLD CC to CV threshold deglitch time 170 ms VRCHG Auto-recharge threshold voltage ARCHG bit = 1 VFLOAT-0.12 V Auto-recharge threshold accuracy ARCHG bit = 1 -17 +17 % tRCHG Auto-recharge threshold deglitch time ARCHG bit = 1 170 ms VBATOVP Battery overvoltage protection This is got by increasing the battery voltage until BATOVP status register turns on VFLOAT+0.1 V Battery OVP accuracy -10 +10 % tBOVP Battery OVP deglitch time 170 ms ITRK Trickle charge current VBAT<VTRK 45 mA Trickle charge current accuracy -20 +20 % IPRE Pre-charge current VTRK< VBAT<VPRE 450 mA Pre-charge current accuracy -10 +10 % IFAST Fast charge current VBAT> VPRE 550 1250 mA |
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