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MM58167 数据表(PDF) 7 Page - National Semiconductor (TI) |
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MM58167 数据表(HTML) 7 Page - National Semiconductor (TI) |
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7 / 10 page ![]() Write Cycle Timing 0 C s TA s 70 C 45V s VDD s 55V VSS e 0V Symbol Parameter Min Max Units tAW Address Valid to Write Strobe 100 ns tCSW Chip Select to Write Strobe 0 ns tDW Data Valid before Write Strobe 100 ns tWRY Write Strobe to Ready Strobe 150 ns tRY Ready Strobe Width 800 ns tRYH Write Hold Time after Ready Strobe 0 ns tWD Data Hold Time after Write Strobe 110 ns tWA Address Hold Time after Write Strobe 50 ns Note 4 If data changes while CS and WR are low then they must remain coincident for 1050 ns after the data change to ensure a valid write Data bus loading is 100 pF Ready output loading is 50 pF and 3 kX pull-up Input and output AC timing levels Logical one e 20V Logical zero e 08V Read and Write Cycle Timing Diagrams TLF11070 – 6 FIGURE 3 Read Cycle Timing TLF11070 – 7 FIGURE 4 Write Cycle Timing 7 |
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