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MM58167 数据表(PDF) 2 Page - National Semiconductor (TI) |
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MM58167 数据表(HTML) 2 Page - National Semiconductor (TI) |
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2 / 10 page ![]() Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Voltage at All Pins VSS b 03V to VDD a 03V Operating Temperature 0 Cto70 C Storage Temperature b 65 Cto a150 C VDDbVSS 60V Lead Temperature (Soldering 10 sec) 300 C Electrical Characteristics VSS e 0V 0 C s TA s 70 C Parameter Conditions Min Max Units Supply Voltage VDD Outputs Enabled 45 55 V VDD POWER DOWN Mode 22 55 V Supply Current IDD Dynamic Outputs TRI-STATE fIN e 32768 kHz VDD e 55V 20 m A VIH t VDD b 03V VIL s VSS a 03V IDD Dynamic Outputs TRI-STATE fIN e 32768 kHz VDD e 55V 5 mA VIH e 20V VIL e 08V Input Voltage Logical Low 00 08 V Logical high 20 VDD V Input Leakage Current VSS s VIN s VDD b 11 m A Output Impedance IO and INTERRUPT OUT Logical Low VDD e 45V IOL e 16 mA 04 V Logical High VDD e 45V IOH eb400 mA 24 V IOH eb10 mA 08 VDD V TRI-STATE VSS s VOUT s VDD b 11 m A Output Impedance RDY and STANDBY INTERRUPT (Open Drain Devices) Logical Low Sink VDD e 45V IOL e 16 mA 04 V Logical High Leakage VOUT s VDD 10 m A 2 |
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