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NSAM266SAA/V 数据表(PDF) 12 Page - National Semiconductor (TI) |
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NSAM266SAA/V 数据表(HTML) 12 Page - National Semiconductor (TI) |
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12 / 52 page  10 Hardware (Continued) 143 Switching Characteristics Definitions All timing specifications in this section refer to 08V or 20V on the rising or falling edges of the signals as illustrated in Figures 1-8 through 1-14 unless specifically stated other- wise Maximum times assume capacitive loading of 50 pF CLKIN crystal frequency is 4096 MHz Note CTTL is an internal signal and is used as a reference to explain the timing of other signals See Figure 1-22 TLEE12584 – 10 Signal valid active or inactive time after a rising edge of CTTL or MWCLK FIGURE 1-8 Synchronous Output Signals (Valid Active and Inactive) TLEE12584 – 11 Signal valid time after a falling edge of MWCLK FIGURE 1-9 Synchronous Output Signals (Valid) TLEE12584 – 12 Signal hold time after a rising edge of CTTL FIGURE 1-10 Synchronous Output Signals (Hold) http www nationalcom 12 |
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