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STTH3BCF060 数据表(PDF) 2 Page - STMicroelectronics |
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STTH3BCF060 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() Characteristics STTH3BCF060 2/8 Doc ID 17524 Rev 2 1 Characteristics To evaluate the maximum conduction losses use the following equation: P = 1.03 x IF(AV) + 0.09 IF 2 (RMS) Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) Forward rms current 10 A IF(AV) Average forward current δ = 0.5 TL = 55 °C 3 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 45 A Tstg Storage temperature range - 65 to + 175 °C Tj Maximum operating junction temperature 175 °C Table 3. Thermal resistance Symbol Parameter Maximum Unit Rth(j-l) Junction to lead 25 °C/W Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR Reverse leakage current Tj = 25 °C VR = VRRM 3 µA Tj= 150 °C 15 100 VF Forward voltage drop Tj = 25 °C IF = 3 A 1.7 V Tj = 150 °C 1.0 1.25 Table 5. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time Tj = 25 °C IF = 1 A, VR = 30 V dIF/dt = -50 A/µs 35 ns tfr Forward recovery time Tj = 25 °C IF = 3 A, dIF/dt = 100 A/µs VFR = 1.1 x VFmax 100 ns VFP Forward recovery voltage 10 V |
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