November 2016

DocID029950 Rev 1

1/12

This is information on a product in full production.

www.st.com

STU6N90K5

N-

channel 900 V, 0.91 Ω typ., 6 A MDmesh™ K5

Power MOSFET in an IPAK package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

STU6N90K5

900 V

1.10 Ω

6 A





Industry’s best FoM (figure of merit)



Ultra-low gate charge



100% avalanche tested



Zener-protected

Applications



Switching applications

Description

This very high voltage N-channel Power

MOSFET is designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

Table 1: Device summary

Order code

Marking

Package

Packing

STU6N90K5

6N90K5

IPAK

Tube

3

2

1

TAB

IPAK