STU6N90K5

Electrical characteristics

DocID029950 Rev 1

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Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

= 4.7 Ω

(see Figure 14: "Test circuit for

resistive load switching times"

and Figure 19: "Switching time

waveform")

-

12.4

-

ns

Rise time

-

12.2

-

ns

Turn-off delay time

-

30.4

-

ns

Fall time

-

15.5

-

ns

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

6

A

Source-drain current

(pulsed)

-

24

A

VSD(2)

Forward on voltage

-

1.5

V

Reverse recovery time

(see Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

-

342

ns

Reverrse recovery charge

-

3.13

µC

Reverse recovery current

-

18.3

A

Reverse recovery time

(see Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

-

536

ns

Reverse recovery charge

-

4.42

µC

Reverse recovery current

-

16.5

A

Notes:

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Gate-source breakdown voltage

30

-

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection, thus eliminating the need for additional external componentry.