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STP16N50M2 数据表(PDF) 7 Page - STMicroelectronics |
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STP16N50M2 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 21 page ![]() STD16N50M2, STF16N50M2, STP16N50M2 Electrical characteristics DocID026641 Rev 5 7/21 Figure 8: Output characteristics Figure 9: Transfer characteristics Figure 10: Gate charge vs. gate-source voltage Figure 11: Capacitance variations Figure 12: Normalized gate threshold voltage vs. temperature Figure 13: Normalized V(BR)DSS vs. temperature ID 16 4 0 0 4 VDS(V) 12 (A) 16 4V 6V VGS=7,8, 9, 10V 12 20 20 5V 8 24 28 8 GIPG02306141524LM ID 24 12 0 0 4 VGS(V) 8 (A) 2 6 10 4 16 VDS=17.5 V 8 20 28 GIPG2606141243LM VGS 6 4 2 0 0 10 Qg(nC) (V) 8 15 10 VDD=400 V ID=13 A 12 150 100 50 0 200 250 VDS 5 VDS (V) 300 350 400 20 GIPG2606141304LM C 1000 100 10 1 0.1 10 VDS(V) (pF) 1 100 Ciss Coss Crss GIPG2606141318LM VGS(th) 1.0 0.8 0.7 0.6 -75 TJ(°C) (norm) -25 1.1 75 25 125 ID=250 µA 0.9 GIPG2606141354LM V(BR)DSS -75 TJ(°C) (norm) -25 75 25 125 0.88 0.92 0.96 1.00 ID=1 mA 1.04 1.08 GIPG2606141424LM |
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