STP16N50M2 datasheet(5/21 Pages) STMICROELECTRONICS

5 / 21 page

STD16N50M2, STF16N50M2, STP16N50M2

Electrical characteristics

DocID026641 Rev 5

5/21

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current

(pulsed)

VSD (2)

Forward on voltage

VGS = 0 V, ISD = 13 A

1.6

trr

Reverse recovery time

ISD = 13 A, di/dt = 100 A/µs,

VDD = 60 V

(see Figure 20: "Test circuit for

inductive load switching and

diode recovery times")

280

Qrr

Reverse recovery charge

2.85

µC

IRRM

Reverse recovery current

20.5

trr

Reverse recovery time

ISD = 13 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

(see Figure 20: "Test circuit for

inductive load switching and

diode recovery times")

388

Qrr

Reverse recovery charge

4.5

µC

IRRM

Reverse recovery current

Notes:

(1)Pulse width is limited by safe operating area.

(2)Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

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