Electrical characteristics

STD52P3LLH6

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DocID025835 Rev 2

2

Electrical characteristics

Table 4: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

30

V

Zero gate voltage drain current

Tc = 125 °C

1

µA

10

µA

Gate body leakage current

±100

nA

Gate threshold voltage

1

2.5

V

Static drain-source on-resistance

0.01

0.012

Ω

0.014

0.017

Ω

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Input capacitance

-

3350

-

pF

Output capacitance

-

414

-

pF

Reverse transfer capacitance

-

287

-

pF

Total gate charge

(see Figure 14: "Gate

charge test circuit" )

-

33

-

nC

Gate-source charge

-

14

-

nC

Gate-drain charge

-

11

-

nC

Gate input resistance

ID = 0

Gate bias = 0

Test signal level = 20 mV

f = 1MHz

-

1.5

Ω

For the P-channel Power MOSFETs the actual polarity of the voltages and the

current must be reversed.