STD52P3LLH6

Electrical characteristics

DocID025835 Rev 2

5/16

Table 6: Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay

time

( see Figure 13: "Switching times test

circuit for resistive load")

-

12.8

-

ns

Rise time

-

112

-

ns

Turn-off delay

time

-

61

-

ns

Fall time

-

45

-

ns

Table 7: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD

(1)

Forward on

voltage

-

1.1

V

Reverse recovery

time

di/dt = 100 A/µs,

(see Figure 15: "Source-drain diode

forward characteristics")

-

25.2

ns

Reverse recovery

charge

-

17.4

nC

Reverse recovery

current

-

1.4

A

Notes:

(1)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

For the P-channel Power MOSFETs the actual polarity of the voltages and the

current must be reversed.