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STP80N10F7 数据表(PDF) 3 Page - STMicroelectronics |
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STP80N10F7 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 25 page ![]() DocID025865 Rev 1 3/25 STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 Electrical ratings 25 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit DPAK H2PAK-2 TO-220 TO-220FP V DS Drain-source voltage 100 V V GS Gate-source voltage ± 20 V I D Drain current (continuous) at T C = 25 °C 70 80 40 A I D Drain current (continuous) at T C = 100 °C 48 54 30 A I DM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 280 320 160 A P TOT Total dissipation at T C = 25 °C 85 110 30 W T stg Storage temperature - 55 to 175 °C T j Max. operating junction temperature Table 3. Thermal data Symbol Parameter Value Unit DPAK TO-220FP H2PAK-2 TO-220 R thj-pcb Thermal resistance junction-pcb max 50 35 °C/W R thj-amb Thermal resistance junction-ambient max 62.5 62.5 °C/W R thj-case Thermal resistance junction-case max 1.76 5 1.36 °C/W |
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