STP80N10F7 datasheet(4/25 Pages) STMICROELECTRONICS

4 / 25 page

Electrical characteristics

STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7

4/25

DocID025865 Rev 1

Electrical characteristics

= 25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(BR)DSS

Drain-source

breakdown voltage

= 250

μA, V

= 0

100

DSS

Zero gate voltage

drain current (V

= 0)

= 100 V

= 100 V, T

=125 °C

100

μA

GSS

Gate-body leakage

current (V

= 0)

= 20 V

100

μA

GS(th)

Gate threshold voltage

= V

, I

= 250 μA

2.5

3.5

4.5

DS(on)

Static drain-source

on-resistance

for DPAK, TO-220 and

TO-220FP: I

= 40 A, V

=10 V

0.0085

0.010

for H

PAK-2: V

=10 V, I

=40 A

0.008

0.0095

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

iss

Input capacitance

= 50 V, f = 1 MHz,

= 0

3100

oss

Output capacitance

700

rss

Reverse transfer

capacitance

-45

Total gate charge

= 50 V, I

= 80 A,

= 10 V

(see

Figure 18)

-45

Gate-source charge

Gate-drain charge

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(on)

Turn-on delay time

= 50 V, I

= 40 A,

= 4.7

Ω, V

= 10 V

(see

Figure 19 and Figure 22)

-19

Rise time

(off)

Turn-off delay time

Fall time

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