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STF6N60M2 数据表(PDF) 1 Page - STMicroelectronics |
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STF6N60M2 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 18 page ![]() This is information on a product in full production. October 2015 DocID024771 Rev 2 1/18 STF6N60M2, STP6N60M2, STU6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages Datasheet - production data Figure 1. Internal schematic diagram Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. TO-220 TO-220FP IPAK 1 2 3 TAB 3 2 1 TAB 1 2 3 AM15572v1 , TAB Order code VDS @ TJmax RDS(on) max ID STF6N60M2 650 V 1.2 Ω 4.5 A STP6N60M2 STU6N60M2 Table 1. Device summary Order code Marking Package Packing STF6N60M2 6N60M2 TO-220FP Tube STP6N60M2 TO-220 STU6N60M2 IPAK www.st.com |
类似零件编号 - STF6N60M2 |
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类似说明 - STF6N60M2 |
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