STF6N60M2 datasheet(3/18 Pages) STMICROELECTRONICS

3 / 18 page

DocID024771 Rev 2

3/18

STF6N60M2, STP6N60M2, STU6N60M2

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220FP

TO-220, IPAK

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

4.5 (1)

1. Limited by maximum junction temperature.

4.5

Drain current (continuous) at TC = 100 °C

2.9(1)

2.9

IDM(2)

2. Pulse width limited by safe operating area.

Drain current (pulsed)

18(1)

PTOT

Total dissipation at TC = 25 °C

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t=1 s; TC=25 °C)

2500

dv/dt(3)

3. ISD ≤ 4.5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V

Peak diode recovery voltage slope

V/ns

dv/dt(4)

4. VDS ≤ 480 V

MOSFET dv/dt ruggedness

Tstg

Storage temperature

- 55 to 150

°C

Operating junction temperature

Table 3. Thermal data

Symbol

Parameter

Value

Unit

TO-220FP

TO-220

IPAK

Rthj-case

Thermal resistance junction-case max

6.25

2.08

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

100

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not

repetitive (pulse width limited by Tjmax)

EAS

Single pulse avalanche energy (starting

Tj=25°C, ID= IAR; VDD=50)

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