BTA10 datasheet(2/14 Pages) STMICROELECTRONICS

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Characteristics

BTA10, BTB10, T10xx

2/14

DocID2937 Rev 7

Characteristics

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current (full sine

wave)

TO-220AB

Tc = 105 °C

TO-220AB Ins.

Tc = 95 °C

ITSM

Non repetitive surge peak on-

state current (full cycle, Tj initial

= 25 °C)

F = 50 Hz

tp = 20 ms

100

F = 60 Hz

tp = 16.7 ms

105

I2t

I2t value for fusing

tp = 10 ms

A2s

dl/dt

Critical rate of rise of on-state

current

IG = 2 x IGT , tr

≤ 100 ns

F = 120 Hz

Tj = 125 °C

A/µs

VDSM/VRSM

Non repetitive surge peak off-

state voltage

tp = 10 ms

Tj = 25 °C

VDRM/VRRM

+ 100

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

PG(AV)

Average gate power dissipation

Tj = 125 °C

Tstg

Storage junction temperature range

-40 to +150

°C

Operating junction temperature range

-40 to +125

°C

Table 3: Static electrical characteristics

Symbol

Test Conditions

Value

Unit

VT(1)

ITM = 14 A, tp = 380 µs

25 °C

Max.

1.55

VTO

threshold on-state voltage

125 °C

Max.

0.85

Dynamic resistance

125 °C

Max.

mΩ

IDRM/IRRM

VDRM = VRRM

25 °C

Max.

µA

125 °C

Notes:

(1)For both polarities of A2 referenced to A1

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