BTA10 datasheet(3/14 Pages) STMICROELECTRONICS

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BTA10, BTB10, T10xx

Characteristics

DocID2937 Rev 7

3/14

Table 4: Electrical characteristics (Tj = 25 °C, unless otherwise specified) -

Snubberless™

(3 quadrants)

Symbol

Parameter

Quadrant

BTA10/BTB10

T1050

Unit

IGT(1)

VD = 12 V, RL

= 33 Ω

I - II - III

Max.

VGT

I - II - III

Max.

1.3

VGD

VD = VDRM, RL

= 3,3 kΩ,

Tj = 125 °C

I - II - III

Min.

0.2

IH(2)

IT = 500 mA

Max.

IG = 1.2 IGT

I - III

Max.

dV/dt(2)

VD = 67 % VDRM gate open,

Tj = 125 °C

Min.

500

1000

V/µs

(dI/dt)c(2)

(dI/dt)c = 5.3 A/ms, Tj = 125 °C

Min.

5.5

A/ms

Notes:

(1) Minimum IGT is guaranteed at 5 % of IGT max.

(2) For both polarities of A2 referenced to A1

Table 5: Electrical characteristics (Tj = 25 °C, unless otherwise specified) - standard Triac

(4 quadrants)

Symbol

Parameter

Quadrant

Value

Unit

IGT(1)

VD = 12 V, RL

= 33 Ω

I - II - III

Max.

100

VGT

All

Max.

1.3

VGD

VD = VDRM, RL

= 3,3 kΩ, Tj = 125 °C

I - II - III

Min.

0.2

IH(2)

IT = 500 mA

Max.

IG = 1.2 IGT

I - III

Max.

100

dV/dt(2)

VD = 67 % VDRM gate open, Tj = 125 °C

Min.

200

400

V/µs

(dV/dt)c(2)

(dI/dt)c = 4.4 A/ms, Tj = 125 °C

Min.

V/µs

Notes:

(1) Minimum IGT is guaranteed at 5 % of IGT max.

(2) For both polarities of A2 referenced to A1

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