Preliminary data

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice

April 2009

Rev 1

1/12

12

LET9045

RF power transistor, LdmoST plastic family

N-channel enhancement-mode lateral MOSFETs

Features

28 V

directive

Description

The LET9045 is a common source N-Channel,

enhancement-mode lateral Field-Effect RF power

transistor. It is designed for high gain, broadband

commercial and industrial applicatios. It operates

at 28 V in common source mode at frequencies of

up to 1 GHz. LET9045 boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS

technology mounted in the first true SMD plastic

RF power package, PowerSO-10RF. LET9045’s

superior linearity performance makes it an ideal

solution for base station applications.

The PowerSO-10 plastic package, designed to

offer high reliability, is the first ST JEDEC

approved, high power SMD package. It has been

specially optimized for RF needs and offers

excellent RF performances and ease of assembly.

Mounting recommendations are available in

www.st.com/rf/ (look for application note

AN1294).

Figure 1.

Pin connection

PowerSO-10RF

(formed lead)

PowerSO-10RF

(straight lead)

Gate

Source

Drain

Table 1.

Device summary

Order codes

Packages

Packaging

LET9045

PowerSO-10RF (formed lead)

Tube

LET9045S

PowerSO-10RF (straight lead)

Tube

LET9045TR

PowerSO-10RF (formed lead)

Tape and reel

LET9045STR

PowerSO-10RF (straight lead)

Tape and reel

www.st.com