LET9045STR datasheet(4/12 Pages) STMICROELECTRONICS

部件名	LET9045STR

功能描述	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical characteristics

LET9045

4/12

Electrical characteristics

TCASE = + 25 °C

2.1

Static

2.2

Dynamic

2.3

ESD protection characteristics

Table 4.

Static

Symbol

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS VGS = 0V

ID = 1 mA

IDSS

VGS = 0V

VDS = 28 V

µA

IGSS

VGS = 5 V

VDS = 0 V

µA

VGS(Q)

VDS = 28 V

ID = 300 mA

2.0

5.0

VDS(ON)

VGS = 10 V

ID = 3 A

1.2

GFS

VDS = 10 V

ID = 3 A

2.5

mho

CISS

VGS = 0V

VDS = 28 V

f = 1 MHz

COSS

VGS = 0V

VDS = 28 V

f = 1 MHz

CRSS

VGS = 0V

VDS = 28 V

f = 1 MHz

0.8

Table 5.

Dynamic

Symbol

Test conditions

Min.

Typ.

Max.

Unit

POUT

VDD = 28 V, IDQ = 300 mA, PIN = 1 W, f = 960 MHz

GPS

VDD = 28 V, IDQ = 300 mA, PIN = 1 W, f = 960 MHz

16.5

17.5

VDD = 28 V, IDQ = 300 mA, PIN = 1 W, f = 960 MHz

Load

mismatch

VDD = 28 V, IDQ = 300 mA, PIN = 1 W, f = 960 MHz All

phase angles

10:1

VSW

Table 6.

ESD protection characteristics

Test conditions

Class

Human body model

Machine model

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