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STAC4932F 数据表(PDF) 1 Page - STMicroelectronics |
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STAC4932F 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() Preliminary data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. September 2010 Doc ID 17158 Rev 3 1/12 12 STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Features ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. (1200 W typ.) with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10% ■ In compliance with the 2002/95/EC European directive ■ ST air cavity packaging technology - STAC® package Description The STAC4932F is a N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications. The STAC4932B benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC®. Figure 1. Pin connection STAC244F Air cavity 1. Drain 2. Gate 3. Source (Bottom side) 1 1 2 2 3 Table 1. Device summary Order code Marking Package Packaging STAC4932F STAC4932F STAC244F Plastic tray www.st.com |
类似零件编号 - STAC4932F |
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类似说明 - STAC4932F |
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