STB100NF04T4 datasheet(4/20 Pages) STMICROELECTRONICS

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Electrical characteristics

STB100NF04T4, STP100NF04

4/20

DocID9969 Rev 7

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

ID = 250 µA, VGS = 0 V

IDSS

Zero gate voltage drain current

VDS = 40 V, VGS = 0 V

µA

VDS = 40 V, VGS = 0 V

TC = 125°C(1)

µA

IGSS

Gate body leakage current

VGS = ±20 V, VDS = 0 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on- resistance

VGS = 10 V, ID= 50 A

4.3

4.6

mΩ

Notes:

(1)Defined by design,not subject to production test

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0 V

5100

Coss

Output capacitance

1300

Crss

Reverse transfer capacitance

160

Total gate charge

VDD = 32 V, ID = 120 A ,

VGS = 10 V

(see Figure 21: "Test

circuit for gate charge

behavior")

110

150

Qgs

Gate-source charge

Qgd

Gate-drain charge

td(on)

Turn-on delay time

VDD = 20 V, ID = 60 A ,

= 4.7 Ω ,VGS = 10 V

(see Figure 20: "Test

circuit for resistive load

switching times" and

Figure 25: "Switching

time waveform")

Rise time

220

td(off)

Turn-off delay time

Fall time

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