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STB100NF04T4 数据表(PDF) 5 Page - STMicroelectronics |
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STB100NF04T4 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 20 page ![]() STB100NF04T4, STP100NF04 Electrical characteristics DocID9969 Rev 7 5/20 Table 6: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 120 A ISDM(1) Source-drain current (pulsed) - 480 A VSD(2) Forward on voltage ISD = 120 A, VGS = 0 V - 1.3 V tr Reverse recovery time ISD = 120 A, VDD = 20 V, di/dt = 100 A/ μs V, Tj = 150 °C (see Figure 22: "Test circuit for inductive load switching and diode recovery times") - 75 - ns td(off) Reverse recovery charge - 185 - nC tf Reverse recovery current - 5 - A Notes: (1)Pulse width limited by safe operating area. (2)Pulsed: Pulse duration = 300 μs, duty cycle 1.5% |
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