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STD26P3LLH6 数据表(PDF) 7 Page - STMicroelectronics |
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STD26P3LLH6 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 16 page ![]() DocID023574 Rev 5 7/16 STD26P3LLH6 Electrical characteristics 16 Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on-resistance vs temperature Figure 11. Normalized VDS vs temperature Figure 12. Source-drain diode forward characteristics C 600 400 200 0 0 10 VDS(V) (pF) 5 800 15 Ciss Coss Crss 20 25 1000 1200 1400 1600 AM15968v1 VGS(th) 0.8 0.6 0.4 0.2 -55 -5 TJ(°C) (norm) -30 1 70 20 45 95 ID=250µA 0 120 AM15969v1 RDS(on) 0.8 0.6 0.2 0 -55 5 TJ(°C) (norm) -30 70 20 45 95 1 1.2 1.4 ID=6A 0.4 1.6 120 AM15970v1 VDS TJ(°C) (norm) 0.94 0.96 0.98 1 1.02 1.04 1.06 1.08 ID=1mA -55 5 -30 70 20 45 95 120 AM15971v1 VSD 2 6 ISD(A) (V) 4 8 10 0.6 0.7 0.8 0.9 TJ=-55°C TJ=175°C TJ=25°C 1 0.5 AM15972v1 |
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