Electrical characteristics

STD26P3LLH6

4/16

DocID023574 Rev 5

2

Electrical characteristics

(T

CASE

= 25 °C unless otherwise specified)

Note:

For the P-channel Power MOSFETs the actual polarity of the voltages and the current must

be reversed.

Table 5. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-source breakdown

Voltage

I

D

= 250 μA, V

GS

= 0

30

V

I

DSS

Zero gate voltage drain

current (V

GS

= 0)

V

DS

= 30 V

1

μA

V

DS

= 30 V, Tc = 125 °C

10

μA

I

GSS

Gate body leakage current

V

GS

= ± 20 V, (V

DS

= 0)

±

100

nA

V

GS(th)

Gate threshold voltage

V

DS

= V

GS

, I

D

= 250 μA1

2.5

V

R

DS(on)

Static drain-source on-

resistance

V

GS

= 10 V, I

D

= 6 A

0.024

0.03

Ω

V

GS

= 4.5 V, I

D

= 6 A

0.038

0.045

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

C

iss

Input capacitance

V

DS

= 25 V, f=1 MHz,

V

GS

= 0

-

1450

-

pF

C

oss

Output capacitance

-

178

-

pF

C

rss

Reverse transfer

capacitance

-120

-

pF

Q

g

Total gate charge

V

DD

= 24 V, I

D

= 12 A

V

GS

= 4.5 V

(see Figure 14)

-12

-

nC

Q

gs

Gate-source charge

-

4.4

-

nC

Q

gd

Gate-drain charge

-

5

-

nC

R

g

Gate input resistance

f = 1 MHz, gate DC

Bias = 0,

test signal level = 20 mV,

I

D

= 0

-1.8

-

Ω