STGIPS10C60 datasheet(5/20 Pages) STMICROELECTRONICS

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DocID025059 Rev 3

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STGIPS10C60

Electrical ratings

2.1

Absolute maximum ratings

Table 3. Inverter part

Symbol

Parameter

Value

Unit

VPN

Supply voltage applied between P - NU, NV, NW

450

VPN(surge)

Supply voltage (surge) applied between P - NU,

NV, NW

500

VCES

Each IGBT collector emitter voltage (VIN

(1) = 0 V)

Applied between HINi, LINi and GND for i = U, V, W

600

± IC

Each IGBT continuous collector current at

TC =25 °C

± ICP

(2)

Pulse width limited by max junction temperature

Each IGBT pulsed collector current

PTOT

Each IGBT total dissipation at TC = 25°C

tscw

Short circuit withstand time, VCE = 0.5 V(BR)CES

TJ =125 °C, VCC =Vboot =15 V, VIN (1) =0 -5 V

5µs

Table 4. Control part

Symbol

Parameter

Value

Unit

VOUT

Output voltage applied between

OUTU, OUTV, OUTW - GND

Vboot - 21 to Vboot + 0.3

VCC

Low voltage power supply

- 0.3 to +21

VCIN

Comparator input voltage

- 0.3 to VCC +0.3

Vboot

Bootstrap voltage applied between

Vboot i - OUTi for i = U, V, W

- 0.3 to 620

VIN

Logic input voltage applied between HIN, LIN and

GND

- 0.3 to 15

VSD/OD

Open drain voltage

- 0.3 to 15

dVOUT/dt Allowed output slew rate

V/ns

Table 5. Total system

Symbol

Parameter

Value

Unit

VISO

Isolation withstand voltage applied between each

pin and heatsink plate (AC voltage, t = 60 s)

2500

Power chips operating junction temperature

- 40 to 150

°C

Module case operation temperature

- 40 to 125

°C

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