DocID024616 Rev 2

5/13

STL4P3LLH6

Electrical characteristics

Note:

For the P-channel MOSFET the actual polarity of the voltages and the current must be

reversed.

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

(1)

1.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward on voltage

-

-

1.1

V

Reverse recovery time

di/dt = 100 A/µs,

-

11.2

-

ns

Reverse recovery charge

-

3.5

-

nC

Reverse recovery current

-

0.6

-

A