This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

December 2014

DocID024616 Rev 2

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13

STL4P3LLH6

P-channel 30 V, 0.048

Ω typ., 4 A STripFET™ H6 DeepGATE™

Power MOSFET in PowerFLAT™ 2x2 package

Datasheet

Figure 1. Internal schematic diagram

Features

• Very low gate charge

• High avalanche ruggedness

• Low gate drive power loss

Applications

• Switching application

Description

This device is a P-channel Power MOSFET

developed using the STripFET™ H6 technology

with a new trench gate structure. The resulting

packages.

Note:

For the P-channel MOSFET the actual polarity of the voltages and the current must be

reversed.

1

2

3

6

5

4

1

2

3

PowerFLAT™ 2x2

1(D)

2(D)

3(G)

6(D)

5(D)

4(S)

D

S

AM11269v1

Order code

STL4P3LLH6

30 V

0.056

Ω at 10 V

4 A

Table 1. Device summary

Order code

Marking

Package

Packaging

STL4P3LLH6

4K3L

PowerFLAT™ 2x2

Tape and reel

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