November 2014

DocID023668 Rev 3

1/15

This is information on a product in full production.

www.st.com

STL6P3LLH6

P-

channel 30 V, 0.024 Ω typ., 6 A STripFET™ H6

Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

STL6P3LLH6

30 V

0.03 Ω

6 A

2.9 W



Very low on-resistance



Very low gate charge



High avalanche ruggedness



Low gate drive power loss

Applications



Switching applications

Description

This device is a P-channel Power MOSFET

developed using the STripFET™ H6 technology,

with a new trench gate structure. The resulting

Power MOSFET exhibits very low RDS(on) in all

packages.

Table 1: Device summary

Order code

Marking

Package

Packaging

STL6P3LLH6

6P3L

PowerFLAT

TM

3.3 x 3.3

Tape and

reel

For the P-channel Power MOSFETs the

actual polarity of the voltages and the

current must be reversed.

1

2

3

4

PowerFL A

T™ 3.3 x 3.3