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STL6P3LLH6 数据表(PDF) 3 Page - STMicroelectronics |
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STL6P3LLH6 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 15 page ![]() STL6P3LLH6 Electrical ratings DocID023668 Rev 3 3/15 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 30 V VGS Gate-source voltage ± 20 V ID (1) Drain current (continuous) at TC = 25 °C 6 A ID (1) Drain current (continuous) at TC = 100 °C 3.8 A IDM (1)(2) Drain current (pulsed) 24 A PTOT Total dissipation at TC = 25 °C 2.9 W Tstg Storage temperature - 55 to 150 °C Tj Max. operating junction temperature 150 °C Notes: (1) The value is rated according Rthj-pcb. (2) Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 2.50 °C/W Rthj-pcb (1) Thermal resistance junction-pcb, single operation 42.8 °C/W Notes: (1) When mounted on FR-4 board of 1inch², 2oz Cu, t<10 sec. For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. |
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