STL7N60M2 datasheet(7/13 Pages) STMICROELECTRONICS

部件名	STL7N60M2

功能描述	Extremely low gate charge

PDF	13 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

7 / 13 page

STL7N60M2

Electrical characteristics

DocID027417 Rev 1

7/13

Figure 8: Capacitance variations

Figure 9: Output capacitance stored energy

Figure 10: Normalized gate threshold voltage

vs temperature

Figure 11: Normalized on-resistance vs

temperature

Figure 12: Source-drain diode forward

characteristics

Figure 13: Normalized V(BR)DSS vs

temperature

100

0.1

(pF)

Ciss

Coss

Crss

1000

DS(V)

100

0.1

f = 1 Mhz

AM15818v1

2.0

1.0

0.5

1.5

2.5

OSS

(µJ)

DS(V)

600

500

400

300

200

100

AM15819v1

GS(th)

(norm)

j(°C)

D = 250 µA

100

-50

0.9

0.8

0.7

0.6

1.0

1.1

AM15718v1

1.3

0.9

0.5

1.7

2.1

2.5

GS = 10 V

j(°C)

100

-50

DS(on)

(norm)

AM15821v1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

SD(A)

(V)

j = -50°C

j = 25°C

j = 150°C

AM15822v1

0.93

0.97

1.01

1.05

1.09

(BR)DSS

(norm)

j (°C)

D = 1mA

100

-50

AM15823v1

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