STGD5H60DF datasheet(4/30 Pages) STMICROELECTRONICS

部件名	STGD5H60DF

功能描述	Trench gate field-stop IGBT, H series 600 V, 5 A high speed

PDF	30 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 30 page

Electrical characteristics

STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF

4/30

DocID027233 Rev 3

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 2 mA

600

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 5 A

1.5

1.95

VGE = 15 V, IC = 5 A

TJ = 125 °C

1.6

VGE = 15 V, IC = 5 A

TJ = 175 °C

1.7

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 250 µA

4.8

6.2

6.9

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ± 20 V

±250

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

-855

Coes

Output capacitance

Cres

Reverse transfer

capacitance

-19

Total gate charge

VCC = 480 V, IC = 5 A,

VGE = 15 V

-43

Qge

Gate-emitter charge

17.5

Qgc

Gate-collector charge

6.5

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