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STGD5H60DF 数据表(PDF) 5 Page - STMicroelectronics

部件名 STGD5H60DF
功能描述  Trench gate field-stop IGBT, H series 600 V, 5 A high speed
PDF  30 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGD5H60DF 数据表(HTML) 5 Page - STMicroelectronics

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DocID027233 Rev 3
5/30
STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF
Electrical characteristics
30
Table 6. Switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 400 V, IC = 5 A,
RG = 47 Ω, VGE = 15 V
-30
-
ns
tr
Current rise time
-
10.8
-
ns
(di/dt)on
Turn-on current slope
-
370
-
A/µs
td(on)
Turn-on delay time
VCE = 400 V, IC = 5 A,
RG = 47 Ω, VGE = 15 V
TJ = 175 °C
-28
-
ns
tr
Current rise time
-11-
ns
(di/dt)on
Turn-on current slope
-
363
-
A/µs
tr(Voff)
Off voltage rise time
VCE = 400 V, IC = 5 A,
RG = 47 Ω, VGE = 15 V
-29
-
ns
td(off)
Turn-off delay time
-
140
-
ns
tf
Current fall time
-
95
-
ns
tr(Voff)
Off voltage rise time
VCE = 400 V, IC = 5 A,
RG = 47 Ω, VGE = 15 V
TJ = 175 °C
-44
-
ns
td(off)
Turn-off delay time
-
146
-
ns
tf
Current fall time
-
134
-
ns
tsc
Short-circuit withstand time
VCC ≤ 360 V, VGE = 15 V,
RG = 47 Ω
-5-
µs
Table 7. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon (1)
1.
Energy losses include reverse recovery of the diode.
Turn-on switching losses
VCE = 400 V, IC = 5 A,
RG = 47 Ω, VGE = 15 V
-56
-
µJ
Eoff
(2)
2. Turn-off losses include also the tail of the collector current.
Turn-off switching losses
-
78.5
-
µJ
Ets
Total switching losses
-
134.5
-
µJ
Eon (1)
Turn-on switching losses
VCE = 400 V, IC = 5 A,
RG = 47 Ω, VGE = 15 V
TJ = 175 °C
-87
-
µJ
Eoff
(2)
Turn-off switching losses
-
134
-
µJ
Ets
Total switching losses
-
221
-
µJ



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