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STGF15H60DF 数据表(PDF) 11 Page - STMicroelectronics

部件名 STGF15H60DF
功能描述  Trench gate field-stop IGBT, H series 600 V, 15 A high speed
PDF  23 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGF15H60DF 数据表(HTML) 11 Page - STMicroelectronics

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DocID025113 Rev 2
11/23
STGB15H60DF, STGF15H60DF, STGP15H60DF
Electrical characteristics
23
Figure 26. Switching times vs. gate resistance
Figure 27. Reverse recovery current vs. diode
current slope
t
1
RG(Ω)
(ns)
212
22
10
32
tf
TJ= 175°C, VGE= 15V,
IC= 15A, VCC= 400V
42
100
tdon
tdoff
tr
GIPD041020131556FSR
Irm
0
di/dt(A/μs)
(A)
0
200
400
10
600
IF = 15A, Vr = 400V
800
15
=175°C
=25°C
20
5
TJ
TJ
GIPD041020131622FSR
Figure 28. Reverse recovery time vs. diode
current slope
Figure 29. Reverse recovery charge vs. diode
current slope
trr
0
di/dt(A/μs)
(µs)
0
200
400
80
600
IF = 15A, Vr = 400V
800
120
=175°C
=25°C
160
40
TJ
TJ
GIPD041020131630FSR
Qrr
0
di/dt(A/μs)
(nC)
0
200
400
400
600
IF = 15A, Vr = 400V
800
600
=175°C
=25°C
200
TJ
TJ
GIPD041020131635FSR
Figure 30. Reverse recovery energy vs. diode
current slope
Err
0
di/dt(A/μs)
(µJ)
0
200
400
80
600
IF = 15A, Vr = 400V
800
120
=175°C
=25°C
40
160
TJ
TJ
GIPD041020131638FSR



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