STGF15H60DF datasheet(3/23 Pages) STMICROELECTRONICS

部件名	STGF15H60DF

功能描述	Trench gate field-stop IGBT, H series 600 V, 15 A high speed

PDF	23 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

3 / 23 page

DocID025113 Rev 2

3/23

STGB15H60DF, STGF15H60DF, STGP15H60DF

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

TO-220

D²PAK

TO-220FP

Unit

VCES

Collector-emitter voltage (VGE = 0)

600

Continuous collector current at TC = 25 °C

30(1)

1. Limited by maximum junction temperature.

Continuous collector current at TC = 100 °C

15(1)

ICP

(2)

2. Pulse width limited by maximum junction temperature.

Pulsed collector current

60(1)

VGE

Gate-emitter voltage

±20

Continuous forward current TC = 25 °C

30(1)

Continuous forward current at TC = 100 °C

15(1)

IFP

(2)

Pulsed forward current

60(1)

PTOT

Total dissipation at TC = 25 °C

115

TSTG

Storage temperature range

- 55 to 150

°C

Operating junction temperature

- 55 to 175

Table 3. Thermal data

Symbol

Parameter

TO-220

D²PAK

TO-220FP

Unit

RthJC

Thermal resistance junction-case IGBT

1.3

°C/W

RthJC

Thermal resistance junction-case diode

2.78

6.25

°C/W

RthJA

Thermal resistance junction-ambient

62.5

°C/W

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