STGP20V60DF datasheet(1/23 Pages) STMICROELECTRONICS

部件名	STGP20V60DF

功能描述	Low thermal resistance

PDF	23 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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1 / 23 page

This is information on a product in full production.

June 2013

DocID024360 Rev 3

1/23

23

STGB20V60DF, STGP20V60DF,

STGW20V60DF, STGWT20V60DF

600 V, 20 A very high speed

trench gate field-stop IGBT

Datasheet - production data

Figure 1. Internal schematic diagram

Features

• Maximum junction temperature: T

J

= 175 °C

• Very high speed switching series

• Tail-less switching off

• Low saturation voltage: V

CE(sat)

= 1.8 V (typ.)

@ I

C

= 20 A

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Very fast soft recovery antiparallel diode

• Lead free package

Applications

• Photovoltaic inverters

• Uninterruptible power supply

• Welding

• Power factor correction

• Very high frequency converters

Description

This device is an IGBT developed using an

advanced proprietary trench gate and field stop

structure. The device is part of the "V" series of

IGBTs, which represent an optimum compromise

between conduction and switching losses to

maximize the efficiency of very high frequency

converters. Furthermore, a positive V

CE(sat)

temperature coefficient and very tight parameter

distribution result in safer paralleling operation.

TO-247

TO-3P

TO-220

D²PAK

1

2

3

TAB

1

2

3

1

2

3

TAB

1

3

TAB

Table 1. Device summary

Order code

Marking

Package

Packaging

STGB20V60DF

GB20V60DF

D²PAK

Tape and reel

STGP20V60DF

GP20V60DF

TO-220

Tube

STGW20V60DF

GW20V60DF

TO-247

Tube

STGWT20V60DF

GWT20V60DF

TO-3P

Tube

www.st.com

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