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STGP20V60DF 数据表(PDF) 5 Page - STMicroelectronics

部件名 STGP20V60DF
功能描述  Low thermal resistance
PDF  23 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGP20V60DF 数据表(HTML) 5 Page - STMicroelectronics

  STGP20V60DF Datasheet HTML 1Page - STMicroelectronics STGP20V60DF Datasheet HTML 2Page - STMicroelectronics STGP20V60DF Datasheet HTML 3Page - STMicroelectronics STGP20V60DF Datasheet HTML 4Page - STMicroelectronics STGP20V60DF Datasheet HTML 5Page - STMicroelectronics STGP20V60DF Datasheet HTML 6Page - STMicroelectronics STGP20V60DF Datasheet HTML 7Page - STMicroelectronics STGP20V60DF Datasheet HTML 8Page - STMicroelectronics STGP20V60DF Datasheet HTML 9Page - STMicroelectronics Next Button
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DocID024360 Rev 3
5/23
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 20 A,
V
GE
= 15 V
,
see Figure 28
-38
-
ns
t
r
Current rise time
-
10
-
ns
(di/dt)
on
Turn-on current slope
-
1556
-
A/μs
t
d(off)
Turn-off delay time
-
149
-
ns
t
f
Current fall time
-
15
-
ns
E
on
(1)
1.
Energy losses include reverse recovery of the diode.
Turn-on switching losses
-
200
-
μJ
E
off
(2)
2.
Turn-off losses include also the tail of the collector current.
Turn-off switching losses
-
130
-
μJ
E
ts
Total switching losses
-
330
-
μJ
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 20 A,
di/dt = 1000 A/μs,
V
GE
= 15 V
,
T
J
= 175 °C, see
Figure 28
-37
-
ns
t
r
Current rise time
-
12
-
ns
(di/dt)
on
Turn-on current slope
-
1340
-
A/μs
t
d(off)
Turn-off delay time
-
150
-
ns
t
f
Current fall time
-
23
-
ns
E
on
(1)
Turn-on switching losses
-
430
-
μJ
E
off
(2)
Turn-off switching losses
-
210
-
μJ
E
ts
Total switching losses
-
640
-
μJ
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
rr
Reverse recovery time
I
F
= 20 A, V
R
= 400 V,
V
GE
= 15 V, see
Figure 28
di/dt = 1000 A/μs
-40
-
ns
Q
rr
Reverse recovery charge
-
320
-
nC
I
rrm
Reverse recovery current
-
16
-
A
dI
rr/
/dt
Peak rate of fall of reverse
recovery current during t
b
-
910
-
A/μs
E
rr
Reverse recovery energy
-
115
-
μJ
t
rr
Reverse recovery time
I
F
= 20 A, V
R
= 400 V,
V
GE
= 15 V,
T
J
= 175 °C, see
Figure 28
di/dt = 1000 A/μs
-72
-
ns
Q
rr
Reverse recovery charge
-
930
-
nC
I
rrm
Reverse recovery current
-
26
-
A
dI
rr/
/dt
Peak rate of fall of reverse
recovery current during t
b
-
530
-
A/μs
E
rr
Reverse recovery energy
-
307
-
μJ



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