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STGFW40V60DF 数据表(PDF) 20 Page - STMicroelectronics

部件名 STGFW40V60DF
功能描述  Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
PDF  21 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGFW40V60DF 数据表(HTML) 20 Page - STMicroelectronics

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Revision history
STGFW40V60DF, STGW40V60DF, STGWT40V60DF
20/21
DocID024402 Rev 8
5
Revision history
Table 11. Document revision history
Date
Revision
Changes
20-Mar-2013
1
Initial release.
17-Apr-2013
2
Document status promoted from preliminary data to production data.
Added: Section 2.1: Electrical characteristics (curves)
04-Jun-2013
3
Added minimum and maximum values for VGE(th) in Table 4: Static
characteristics.
11-Sep-2013
4
Updated VF value in Table 4: Static characteristics.
08-Oct-2013
5
Updated title, features and description in cover page.
10-Jan-2014
6
Updated Figure 8: VCE(sat) vs. junction temperature, Figure 15: Diode
VF vs. forward current and Figure 16: Normalized VGE(th) vs junction
temperature.
03-Mar-2014
7
Updated test conditions in Table 7: Diode switching characteristics
(inductive load).
23-Apr-2014
8
Added new device in TO-3PF.
Updated Table 1: Device summary, Table 2: Absolute maximum
ratings Table 3: Thermal data and Section 4: Package mechanical
data.
Added Figure 4: Power dissipation vs. case temperature for TO-3PF,
Figure 5: Collector current vs. case temperature for TO-3PF,
Figure 11: Collector current vs. switching frequency for TO-3PF and
Figure 12: Forward bias safe operating area for TO-247 and TO-3P.
Minor text changes.



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