STGFW40V60DF datasheet(4/21 Pages) STMICROELECTRONICS

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Electrical characteristics

STGFW40V60DF, STGW40V60DF, STGWT40V60DF

4/21

DocID024402 Rev 8

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 4. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 2 mA

600

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 40 A

1.8

2.3

VGE = 15 V, IC = 40 A

TJ = 125 °C

2.15

VGE = 15 V, IC = 40 A

TJ = 175 °C

2.35

Forward on-voltage

IF = 40 A

1.7

2.45

IF = 40 A, TJ = 125 °C

1.4

IF = 40 A, TJ = 175 °C

1.3

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ± 20 V

250

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

-5400

Coes

Output capacitance

220

Cres

Reverse transfer

capacitance

-180

Total gate charge

VCC = 480 V, IC = 40 A,

VGE = 15 V, see Figure 34

-226

Qge

Gate-emitter charge

Qgc

Gate-collector charge

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